Flash Memory Structure with Reduced Dimension of Gate Structure and Methods of Forming Thereof

ABSTRACT

An integrated circuit for a flash memory device with enlarged spacing between select and memory gate structures is provided. The enlarged spacing is obtained by forming corner recesses at the select gate structure so that a top surface with a reduced dimension of the select gate structure is obtained. In one example, a semiconductor substrate having memory cell devices formed thereon, the memory cell devices includes a semiconductor substrate having memory cell devices formed thereon, the memory cell devices includes a plurality of select gate structures and a plurality of memory gate structures formed adjacent to the plurality of select gate structures, wherein at least one of the plurality of select gate structures have a corner recess formed below a top surface of the at least one of the plurality of select gate structures.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of and claims priority to U.S. patentapplication Ser. No. 15/694,611, filed on Sep. 1, 2017, and entitled,“Flash Memory Structure with Reduced Dimension of Gate Structure,” whichapplication is hereby incorporated herein by reference.

BACKGROUND

Reliably producing sub-half micron and smaller features is one of thekey technology challenges for next generation very large-scaleintegration (VLSI) and ultra large-scale integration (ULSI) ofsemiconductor devices. However, as the limits of circuit technology arepushed, the shrinking dimensions of VLSI and ULSI technology have placedadditional demands on processing capabilities. Reliable formation ofgate structures on the substrate is important to VLSI and ULSI successand to the continued effort to increase circuit density and the qualityof individual substrates and dies.

Flash memory is an electronic non-volatile computer storage medium thatcan be electrically erased and reprogrammed. It is used in a widevariety of commercial and military electronic devices and equipment. Tostore information, flash memory includes an addressable array of memorycells, typically made from floating gate transistors. Common types offlash memory cells include stacked gate memory cells and split gatememory cells. Split gate memory cells have several advantages overstacked gate memory cells, such as lower power consumption, higherinjection efficiency, less susceptibility to short channel effects, andover erase immunity.

However, as the device dimensions continue to be scaled down, shortdistance among the gate memory cells may result in current leakage.Thus, proper management of the distances and dimensions among the gatememory cells is desired to provide the device structures with desiredelectrical performance.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIGS. 1A-1B depict cross-sectional views of some embodiments of asemiconductor structure with memory cell devices in accordance with someembodiments;

FIGS. 2A-2B depict cross-sectional views of some embodiments of asemiconductor structure with memory cell devices in accordance with someembodiments;

FIG. 3 depicts a flow chart of an exemplary process for manufacturing amemory device structure on a substrate in accordance with someembodiments

FIGS. 4A-4I depict cross sectional views of a substrate with compositestructures at different stages of the manufacturing process depicted inFIG. 3 in accordance with some embodiments;

FIG. 5 depicts a cross-sectional view of a substrate with an array ofmemory cells formed therein in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

A trend in the semiconductor manufacturing industry is to integratedifferent semiconductor components of a composite semiconductor deviceinto a common semiconductor structure. Such integration advantageouslylowers manufacturing costs, simplifies manufacturing procedures, andincreases operational speed. One type of composite semiconductor deviceoften integrated into a common semiconductor structure is a flash memorydevice. A flash memory device includes an array of flash memory celldevices and logic devices supporting operation of the flash memory celldevices. When the array of flash memory cell devices and the logicdevices are integrated into a common semiconductor structure, the flashmemory device is often referred to as a flash memory device.

Common types of flash memory cell devices include stacked gate flashmemory cell devices and split gate flash memory cell devices. Split gateflash memory cell devices have several advantages over stacked gateflash memory cell devices, such as lower power consumption, higherinjection efficiency, less susceptibility to short channel effects, andover erase immunity. Examples of split gate flash memory cell devicesinclude silicon-oxide-nitride-oxide-silicon (SONOS) split gate flashmemory cell devices, metal-oxide-nitride-oxide-silicon (MONOS) splitgate flash memory cell devices, and third generation SUPERFLASH (ESF3)memory cell devices.

Flash memory devices include flash memory cell devices, which aretypically formed with polysilicon gate structures insulated by silicondioxide, as well as logic devices, such as address decoders orread/write circuitry. In forming a flash memory device according to somemethods, the flash memory cell devices are formed with polysilicon gatestructures while the logic devices are formed with sacrificial gatestructures insulated by high dielectric constant materials. With theflash memory cell devices and the logic devices formed, silicide isformed over the source/drain regions. The silicide advantageouslyreduces the resistance between the source/drain regions and subsequentlyformed contacts. The silicide may be formed over the polysilicon gatestructures as well as the source/drain regions to reduce contactresistance. Furthermore, an interlayer dielectric structure is formedover the logic and memory cell devices, and a planarization process isperformed on the interlayer dielectric structure to expose the silicideon the polysilicon gate structures. However, metal contamination mayoccur during the planarization process which may adversely affect thememory cells. For example, as the dimension continues to shrink, thedistance from a first gate structure to a neighboring second gatestructure in the memory cells is relatively short. As a result, metalleft over from the planarization process tends to be trapped in theshort distance between the first and the second gate structure,resulting in current leakage among the memory cells.

Embodiments of a memory cell device with a first gate structure having acorner recess and a second gate structure neighboring the first gatestructure are provided. The corner recess may be filled with insulatingmaterials. The corner recess formed at a corner of a top surface of thefirst gate structure increases the distance from one side of the topsurface of the first gate structure to another side of the top surfaceof the neighboring second gate structure. The silicide is then formedover the top surfaces adjacent to the corner recess on the first gatestructure and the neighboring second gate structure. The corner recessenlarges the insulating region with an enlarged distance between thesilicide formed on top surfaces of the first gate structure and theneighboring second gate structure. The enlarged distance provides awider process window during the planarization process to prevent metalcontamination from being trapped among the gate structures in the memorycells. The semiconductor structure with the recessed cornersadvantageously prevents metal from remaining on the substrate after aplanarization process.

FIGS. 1A and 1B depict cross-sectional views of a portion of asemiconductor device structure 100 with memory cell devices 102 (shownas 102 a, 102 b) in accordance with some embodiments. It is noted thatother portions or other types of devices, such as logic devices, are notshown in the drawing for sake of clarity. The memory cell devices 102include a first memory cell device 102 a and a second memory cell device102 b. The memory cell devices 102 store data in a nonvolatile mannerand are, for example, metal-oxide-nitride-oxide-silicon (MONOS) orsilicon-oxide-nitride-oxide-silicon (SONOS) split gate flash memory celldevices. Some logic devices (not shown in the drawings) may coordinateto implement logic supporting operation of the memory cell devices 102and are, for example, transistors.

In one example, the memory cell devices 102 are localized to a memoryregion 108 of a semiconductor substrate 101. The substrate 101 includesmaterials selected from at least one of crystalline silicon (e.g.,Si<100> or Si<111>), silicon oxide, strained silicon, silicon germanium,doped or undoped polysilicon, doped or undoped silicon wafers andpatterned or non-patterned wafers silicon on insulator (SOI), carbondoped silicon oxides, silicon nitride, doped silicon, germanium, galliumarsenide, glass and sapphire. In the embodiment wherein a SOI structureis utilized for the substrate 101, the substrate 101 may include aburied dielectric layer disposed on a silicon crystalline substrate. Inthe embodiments depicted herein, the substrate 101 is a siliconcontaining material, such as crystalline silicon substrate. Moreover,the substrate 101 is not limited to any particular size, shape ormaterials. The substrate 101 may be a round/circular substrate having a200 mm diameter, a 300 mm diameter or other diameters, such as 450 mm,among others. The substrate 101 may also be any polygonal, square,rectangular, curved or otherwise non-circular workpiece, such as apolygonal glass substrate as needed.

The memory cell device 102 includes a select gate structure 124 (shownas 124 a, 124 b) in the memory region 108. A memory gate structure 126(shown as 126 a, 126 b) is spaced on the substrate 101 in the memorycell device 102. In one example, the select and memory gate structures124, 126 of the memory cell devices 102 are fabricated from polysiliconcontaining materials.

In one example, a top surface 199 of the select gate structure 124 hassimilar height to the top surfaces 197 (e.g., substantially coplanar) ofthe memory gate structure 126. The select gate structure 124 and thememory gate structure 126 have, for example, a generally rectangularprofile.

A select gate dielectric 134 (shown as 134 a, 134 b) is formed betweenthe semiconductor substrate 101 and the select gate structure 124. Theselect gate dielectric 134 electrically isolates the select gatestructure 124 from the semiconductor substrate 101. A charge trappingdielectric 136 (shown as 136 a, 136 b) is formed between thesemiconductor substrate 101 and the memory gate 126. The charge trappingdielectric 136 electrically isolates the memory gate structure 126 fromthe semiconductor substrate 101. The charge trapping dielectric 136further extends vertically up between the memory gate structure 126 andthe select gate structure 124 to electrically isolate the memory gatestructure 126 from the select gate structure 124. The top surface 198 ofthe charge trapping dielectric 136 has similar height (e.g.,substantially coplanar) to the top surfaces 199, 197 of the select gatestructure 124 and the memory gate structure 126. The top surface 198 ofthe charge trapping dielectric 136 has a width 151 a between about 20 nmand about 60 nm. The select gate dielectric 134 is, for example, anoxide, such as silicon dioxide material. The charge trapping dielectric136 is, for example, a multilayer dielectric, for example a compositematerial having at least three layers, such as an oxide-nitride-oxide(ONO) dielectric (e.g., the oxide-nitride-oxide (ONO) dielectricmaterials 136(i), 136(ii), 136(iii) depicted in the enlarged view inFIG. 4F(a)) or an oxide-silicon-oxide (OSiO) dielectric material.

A main sidewall structure 144 is formed on sidewalls of the memory celldevices 102. The main sidewall structure 144 extends vertically up fromthe semiconductor substrate 101 to above or substantially similar heightto the top surfaces 197 of the memory gate structures 126. For example,the main sidewall structure 144 extends from the semiconductor substrate101, along sidewalls of the select gate dielectric 134 and the selectgate structure 124. In one example, the main sidewall structure 144 is adielectric material, such as a silicon nitride material.

An interlayer dielectric material 152 extends from the semiconductorsubstrate 101 over top surfaces 199, 198, 197 of the select and memorygate structures 124, 126 and the charge trapping layer 136. Theinterlayer dielectric material 152 further includes an interlayerinsulating substructure 150 covering the memory cell 102 (or logiccells, which are not shown here) formed on the semiconductor substrate101. Source/drain silicide contact pads 138 are formed under theinterlayer insulating substructure 150 and above the substrate 101. Insome embodiments, the silicide contact pads 138 have a thickness ofabout 50 Å-200 Å. The silicide contact pads 138 reduce resistancebetween the source/drain regions (not shown) in the substrate 101 andthe memory gate structures 126 by providing a better and lowerresistance contact surface. In some embodiments, the interlayerinsulating substructure 150 has a top surface having similar height(e.g., substantially coplanar) to the top surfaces of the memory cell102. In some embodiments, the interlayer dielectric material 152 has abottom surface in contact with the top surfaces of the interlayerinsulating substructure 150 and the memory cell 102, including the topsurfaces 199, 197 of the select and memory gate structures 124, 126. Inone example, the interlayer dielectric material 152 along with theinterlayer insulating substructure 150 is fabricated from an insulatingmaterial, such as a silicon oxide material, low-k material, or othersuitable materials as needed.

Memory silicide contact pads 160, 162 are formed over upper top surfaces199, 197 of the select gate structure 124 and the memory gate structures126, as shown in FIG. 1B. The silicide contact pads 138 are, forexample, nickel silicide, cobalt silicide, or titanium silicide.However, as discussed above, due to the space constraint defined by thewidth 151 a of the charge trapping dielectric 136, when a planarizationprocess is performed, excess or redundant silicide metal 164 polishedaway from the memory silicide contact pads 160, 162 may be trapped oradhered at the surface 198 of the charge trapping dielectric 136,leaving undesired redundant silicide metal 164 on the surface 198 of thecharge trapping dielectric 136. The limited dimension defined betweenthe top surfaces 199, 197 of the select and memory gate structures 124,126 often creates a concave structure in the memory devices 102 thattraps the redundant silicide metal 164 and makes the redundant silicidemetal 164 hard to be removed in subsequent cleaning processes. Suchmetal contamination may bridge the memory silicide contact pads 160, 162formed in the select and memory gate structures 124, 126 individually,resulting in current leakage and short circuit.

In one example, the memory silicide contact pad 160, 162 is fabricatedfrom a nickel (Ni) and/or platinum (Pt) alloy. During the silicidationprocess, the nickel elements react with the silicon materials from thegate structures to form nickel silicide, such as the memory silicidecontact pad 160, 162. The platinum may be precipitated from the nickelsilicide on the substrate surface as a metal contaminant 164. In thesubsequent planarization process, the relative movement between thesubstrate 101 and the polishing head often causes the platinum from theredundant silicide metal 164 to be trapped in the constraint space(e.g., the width 155 a or the width 151 a shown in FIGS. 1A and 1B)above the surface 198 of the charge trapping dielectric 136 and the topsurface 197 of the memory gate structure 126. The trapped redundantsilicide metal 164 may partly bridge the conductive features in theselect and memory gate structures 124, 126, resulting in the undesiredcurrent leakage and short circuit.

In one example, the select gate structure 124 may have a substantiallyrectangular or square form having an outer sidewall 172 in contact withthe charge trapping dielectric 136. For example, the select gatestructure 124 may have a horizontal width 140 (e.g., parallel to abottom surface 159 of the select gate structure 124) of between about 70nm and about 90 nm, such as about 85 nm. The selected gate structure 124may have a vertical height 142 (e.g., parallel to the outer sidewall 172of the select gate structure 124) of between about 70 nm and about 90nm, such as about 85 nm (as shown in FIG. 1B).

FIG. 2A-2B depicts cross-sectional views of a portion of thesemiconductor device structure 200 with memory cell devices 102 a, 102 bwith corner recesses 204 a, 204 b formed in the select gate structures124 a, 124 b. The corner recesses 204 a, 204 b define a lower surface196 (e.g., a bottom surface) having a step height 210 from the topsurface 199 of the select gate structure 124. The corner recesses 204 a,204 b have a width 212 defined between an inner sidewall 170 and theouter sidewall 172 of the select gate structure 124. The width 212defined by the corner recesses 204 a, 204 b enlarges a spacing 206(shown as 206 a, 206 b) between the inner sidewall 170 of the selectgate structure 124 and a shared sidewall 174 shared between the chargetrapping layer 136 and the memory gate structures 126.

As further shown in FIG. 2B, after the silicidation process, the memorysilicide contact pad 162 is formed on the top surface 197 of the memorygate structure 126 and the memory silicide contact pad 160 having thereduced dimension 202 (shown as 202 a, 202 b) is formed on the topsurface 199 of the select gate structure 124. It is noted that some ofthe silicon materials from the memory and select gate structure 126,124from the top surfaces 197, 199 may be consumed to form the memorysilicide contact pad 160, 162, defining new top surfaces 252, 254 of thememory silicide contact pad 162, 160. The new top surfaces 252, 254 areslightly above the top surface 197, 198 from the memory gate structure126 and the charge trapping layer 136. The bottom surfaces 253, 299 ofthe memory silicide contact pad 162, 160 are slightly below top surface197, 198 from the memory gate structure 126 and the charge trappinglayer 136.

The corner recesses 204 a, 204 b allow the memory silicide contact pad162, 160 to have an enlarged spacing 220 (shown as 220 a, 220 b) greaterthan the original width 155 a so that the unreacted or redundant metalfrom the silicidation process would not be trapped or embedded into thecharge trapping layer 136 or partly embedded into the memory gate 126structure or select gate structure 124 after the planarization process.In one example, the enlarged spacing 220 a, 220 b is about 10 percent toabout 30 percent greater than the original spacing 155 a, 155 b (asshown in FIG. 1B) after the memory silicide contact pads 162, 160 areformed. In one example, the enlarged spacing 220 (shown as 220 a, 220 b)after the memory silicide contact pad 162, 160 are formed is slightlygreater than the spacing 206 (shown as 206 a, 206 b) from FIG. 2A as theenlarged spacing 220 may include an additional small area above thememory gate structure 126 that does not have the memory silicide contactpad.

The corner recesses 204 (as shown in FIG. 2B) have a width 212 (inhorizontal direction) between about 10 nm and about 15 nm and a stepheight 210 (in vertical direction) between about 10 nm and about 40 nm,such as between 10 nm and 20 nm. The reduced dimension 202 a of thememory silicide contact pad 160 is between about 30 nm and about 40 nm.The width 212 in horizontal direction of the corner recesses 204 a, 204b is about 10 percent to about 30 percent shorter than the totalhorizontal width 140 of the select gate structure 124. The step height210 in vertical direction of the corner recesses 204 a, 204 b is about10 percent to about 30 percent shorter than the total vertical depth 142of the select gate structure 124. The corner recesses 204 a, 204 b arealso substantially in the form of rectangular or square configurations.

The corner recesses 204 provides the enlarged spacing 206 a, 206 b, asshown in FIG. 2A, for an edge (e.g., the inner walls 170) of the selectgate structure 124 passing through the top surface 198 of the chargetrapping layer 136 then to the edge (e.g., a sidewall 174) of the memorygate structure 126. The enlarged spacing 206 a, 206 b is between about40 nm and about 80 nm, such as about 15 percent and about 40 percentlarger than the spacing 151 a (shown in FIG. 1A) without the extra width212 provided from the corner recesses 204.

In operation, each memory cell device 102 stores a variable amount ofcharges, and/or electrons, in the charge trapping dielectric 136. Thecharge is advantageously stored in a non-volatile manner so that thestored charge persists in the absence of power. The amount of chargestored in the charge trapping dielectric 136 represents a value, such asbinary value, and is varied through program (i.e., write), read, anderase operations. These operations are performed through selectivebiasing of the select gate structure 124 and the memory gate structure126.

During a program or erase operation of the memory cell device 102, thememory gate structure 126 is forward or reverse biased with a high(e.g., at least an order of magnitude higher) voltage relative to avoltage applied to the select gate structure 124. In some embodiments,forward biasing is used for a program operation, and reverse biasing isused for an erase operation. During a program operation, the high biasvoltage promotes Fowler-Nordheim tunneling of carriers from the channelregion formed in the substrate towards the memory gate structure 126. Asthe carriers tunnel towards the memory gate structure 126, the carriersbecome trapped in the charge trapping dielectric 136. During an eraseoperation, the high bias voltage promotes Fowler-Nordheim tunneling ofcarriers in the charge trapping dielectric 136 away from the memory gate126. As the carriers tunnel away from the memory gate structure 126, thecarriers become dislodged or otherwise removed from the charge trappingdielectric 136. Charge stored in the charge trapping dielectric 136 of amemory cell device 102 screens an electric field formed between thememory gate 126 and the channel region 114 when the memory gatestructure 126 is biased. During a read operation, a voltage is appliedto the select gate structure 124 to induce part of the channel region inthe substrate to conduct. Application of a voltage to the select gatestructure 124 attracts carriers to part of the channel region 114adjacent to the select gate structure 124. If the memory cell device 102turns on (i.e., allows charge to flow), then it stores a first datastate (e.g., a logical “0”). If the memory cell device 102 does not turnon, then it stores a second data state (e.g., a logical “1”).

FIG. 3 depicts an exemplary flow diagram of a process 300 performed toform a semiconductor device structure, such as corner recesses formed ina select gate structure depicted in FIGS. 1A-2B discussed above. FIGS.4A-4I are schematic cross-sectional views of a portion of the substrate101 corresponding to various stages of the process 300 in accordancewith some embodiments. The example depicted in FIGS. 4A-4I utilizing theprocess 300 is configured to form the semiconductor device structure 100as previously discussed with reference to FIGS. 1A-2B. However, it isnoted that the process 300 as well as the exemplary structures depictedin FIGS. 4A-4I may be utilized to form any suitable structures,including the semiconductor device structure not presented herein.

The process 300 begins at operation 302 by providing the substrate 101having a first gate electrode layer 125 that may be later patterned toform the select gate structure 124 on the substrate 101. In one example,the first gate electrode layer 125 may be a crystalline siliconmaterial, doped or undoped polysilicon materials and the like. In oneexample, the first gate electrode layer 125 utilized to form the selectgate structure 124 is a p-type or n-type doped polysilicon material,such as a p-type doped polysilicon material.

At operation 304, a first charge trapping dielectric 402 is formed onthe first gate electrode layer 125, as shown in FIG. 4B. It is notedthat the first charge trapping dielectric 402 as formed here may be adummy dielectric, also called a sacrificial dielectric, which may belater removed after the structures and/or features are transferred andformed onto the substrate 101. The first charge trapping dielectric 402comprise a single layer or multiple layers. In one example, the firstcharge trapping dielectric 402 includes an ONO structure having a firstlayer 402 a formed by a silicon oxide material, a second layer 402 bformed by a silicon nitride material and a third layer 402 c formed by asilicon oxide material. It is noted that different types of thedielectric materials may also be utilized to form the dielectric 402 toassist defining the features/structures on the substrate 101.

A patterned hardmask layer 461 may be formed on the charge trappingdielectric 402 to define openings 462 therebetween. The openings 462exposes a portion 463 of the first charge trapping dielectric 402 thatmay be patterned or etching in the subsequent manufacturing processes.

At operation 306, a patterning process is performed to pattern the firstcharge trapping dielectric 402, as shown in FIG. 4C, through theopenings 462 defined by the patterned hardmask layer 461. The patterningprocess is performed to etch the portion 463 of the first chargetrapping dielectric 402 unprotected by the patterned hardmask layer 461from the substrate 101. The patterning process is continuously performedto over-etch a portion of the underlying the first gate electrode layer125 away from the substrate 101 until a surface 464 of the first gateelectrode layer 125 is exposed. The patterned hardmask layer 461 may beconsumed and etched away at this operation during the patterningprocess. The over-etching of the first gate electrode layer 125 definesa top portion 469 having an inner sidewall 170 exposed and the topsurface 199 in contact with the first charge trapping dielectric 402.The over-etching of the first gate electrode layer 125 is continuouslyperformed to form the top portion 469 until a certain predetermineddepth, such as the step height 210 described above, is reached. Thus,the over-etching process is set to be terminated when the desired stepheight 210 of the top portion 469 of the first gate electrode layer 12is formed. The step height 210 defined by the top portion 469 may thenlater utilized to form the corner recesses 204 a, 204 b (e.g., topcorners) for select gate structures 124.

In one example, the patterning gas mixture includes at least a halogencontaining gas having a carbon element to pattern the first chargetrapping layer 402 and a halogen containing gas to pattern (e.g., overetch) the first gate electrode layer 125 to form the top portion 469.Exemplary halogen containing gases having a carbon element (e.g., acarbon and halogen containing gas) include CF₄, CHF₃, CH₂F₂, C₂F₆, C₂F₈,C₄F₆ and the like. Suitable examples of the halogen containing gasinclude HBr, CF₄, CHF₃, HCl, Cl₂, CH₂F₂, C₂F₆, C₂F₈, C₄F₆, SF₆, NF₃, andthe like. In one example, a carbon fluoride gas, such as CF₄, CHF₃,CH₂F₂, C₂F₆, C₂F₈, C₄F₆ and the like, may be used in the patterning gasmixture to pattern the first charge trapping layer 402 and the firstgate electrode layer 125. In some examples, a different gas, such as ahalogen containing gas, is utilized during the over-etching process toetch the first gate electrode layer 125. The halogen containing gasutilized to etch the first gate electrode layer 125 is HBr gas, with orwithout Cl₂, to define the top portion 469, which may be later utilizedto form the corner recesses 204 a, 204 b.

At operation 308, after the top portion 469 is defined in the first gateelectrode layer 125, a nitride layer 404 is then conformally formed onthe substrate 101 covering the first charge trapping dielectric 402 aswell as the first gate electrode layer 125. The nitride layer 404 isformed along the top surface 469 and along the inner sidewall 170 of thetop portion 469 defined in the first gate electrode layer 125, extendingfurther to the sidewall 465 and top surface 466 of the first chargetrapping dielectric 402 to form a conformal protection on the substratesurface. The nitride layer 404 protects the top surface 466, thesidewalls 465, 170 of the first charge trapping layer 125 and the topportion 469 from damage in the series of depositions and patterningprocess subsequently performed.

In one embodiment, the nitride layer 404 may have a thickness that maybe utilized to later define a width of the corner recesses 204 a, 204 bdefined in the select gate structures 124 a, 124 b.

At operation 310, after the nitride layer 404 is formed, an etchingand/or patterning process is performed to continue etching the firstgate electrode layer 125 unprotected by the first charge trapping layer402. The etching process is performed until a surface 470 of thesubstrate 101 is exposed, as shown in FIG. 4E. The etching process formsan opening 406 between the stand-alone select gate structures 124 a, 124b. It is noted that the numbers of the select gate structures 124 formedon the substrate 101 may be varied or changed as needed. It is notedthat the distance and dimension between the select gate structures 124a, 124 b may be altered or may not reflect the dimension in real productfor ease of description and explanation.

After the opening 406 is formed between the select gate structures 124a, 124 b, the corner recesses 204 a, 204 b (e.g., a top corner) is thendefined in the select gate structures 124 a, 124 b, as shown in FIG. 4E,with the nitride layer 404 filled therein, serving as an insulatingstructure at the corner recesses 204 a, 204 b (e.g., a top corner). Asthe step height 210 is already defined by the top portion 469 describedabove, the etching-through of the first gate electrode layer 125 atoperation 310 further defines the width 212 of the corner recesses 204a, 204 b formed in the select gate structures 124 a, 124 b. The opening406 formed between the select gate structures 124 a, 124 b defines theouter sidewall 172 of the select gate structures 124 a, 124 b. Thenitride layer 404 sits on and is interfaced with the bottom surface 196of the corner recesses 204 a, 204 b of the select gate structures 124 a,124 b and extends upwards and remains in contact with the sidewall 465and top surface 466 of the first charge trapping layer 402. The nitridelayer 404 remaining in the corner recesses 204 a, 204 b assistsmaintaining the contour of the corner recesses 204 a, 204 b and protectsthe bottom surface 196 of the corner recesses 204 a, 204 b from damagein the series of depositions and patterning process subsequentlyperformed.

At operation 312, a second charge trapping layer 136 and a second gateelectrode layer 127 is formed on the substrate 101, as shown in FIG. 4F.The second charge trapping layer 136 may comprise a single layer ormultiple layers. In one example, the second charge trapping layer 136 issimilar to the first charge trapping layer 402 having a ONO structure,such as having a first layer 136(i) formed by a silicon oxide material,a second layer 136(ii) formed by a silicon nitride material and a thirdlayer 136(iii) formed by a silicon oxide material, as circled and shownin the enlarged view in FIG. 4F(a). It is noted that different types ofthe dielectric materials may also be utilized to form the second chargetrapping layer 136, such as a NON (e.g., silicon nitride-siliconoxide-silicon nitride) structures, OSiO (e.g., siliconoxide-silicon-silicon oxide) and other suitable materials.

The second gate electrode layer 127 formed on the second charge trappinglayer 136 may be later patterned to form the memory gate structure 126on the substrate 101. In one example, the second gate electrode layer127 may be a crystalline silicon material, doped or undoped polysiliconmaterials and the like. In one example, the second gate electrode layer127 utilized to form the memory gate 126 is a p-type or n-type dopedpolysilicon material.

At operation 314, a patterning process is performed to remove the excesssecond gate electrode layer 127 from the substrate 101, forming thememory gates 126 a and 126 b on the substrate, as shown in FIG. 4G. Theremoval of the excess second gate electrode material 127 defines the topsurface 197 of the memory gate structures 126 and 126 b, partiallybounded by the second charge trapping layer 136. The second chargetrapping layer 136 surrounds a sidewall and bottom surface of the memorygate structures 126 a, 126 b.

At operation 314, a series of patterning processes are performed toremove the excess second charge trapping layer 136 above the top surface197 of the memory gate structures 126 a, 126 b, as well as the remainingfirst charge trapping layer 402 and the nitride layer 404 from thesubstrate 101, as shown in FIG. 4H. A portion of the nitride layer 404may remain, filling in the corner recesses 204 a, 204 b on the substrate101 so as to protect the bottom surface 196 of the corner recesses 204a, 204 b of the select gate structures 124 a, 124 b as well asmaintaining desired electrical performance. The removal of the excesssecond gate electrode layer 127 in the opening 406, the excess nitridelayer 404, and the first charge trapping layer 402 is followed by adeposition process to form the interlayer insulating substructure 150between the select gate structures 124 a, 124 b.

At this stage, as discussed above, the nitride layer 404 may remain inthe corner recesses 204 a, 204 b of the select gate structures 124 a,124 b serving as an insulating structure at the corner recesses 204 a,204 b (e.g., a top corner) for interface protection and deviceperformance control. Alternatively, the nitride layer 404 may be removedand replaced with other suitable dielectric materials, such as siliconoxide, silicon oxynitride, metal dielectric materials, or high-kmaterials as needed.

The top surface 199 of the select gate structures 124 a, 124 b is alsoexposed at this stage, defining the width 202 a, 202 b of the topportion 469 of the select gate structures 124 a, 124 b. The cornerrecesses 204 a, 204 b provide the enlarged spacing 206 a, 206 b from theinner sidewall 170 of the select gate structures 124 a, 124 b to theshared sidewall 174 shared between the second charge trapping layer 136and the memory gate 126 a, 126 b.

At operation 318, after the corner recesses 204 a, 204 b are definedwith the nitride layer 404 optionally filled therein, a silicidationprocess is then performed to form the memory silicide contact pads 160,162 over upper top surfaces 199, 197 of the select gate 124 and thememory gates 126, as shown in FIG. 4I.

FIG. 5 depicts a cross sectional view of a semiconductor device 500utilizing the corner recesses 204 a, 204 b formed in the select gatestructures 124 a, 124 b so that an enlarged spacing between the memorysilicide contact pad 160, 162 is formed over upper top surfaces 199, 197of the select gate structures 124 and the memory gate structures 126 areobtained. After the formation of the select gate structures 124 and thememory gate structures 126, metal plugs 512 may be formed in theinterlayer dielectric material 152 connecting the memory silicidecontact pad 160, 162 to the metal structures 510 formed in the firstmetal interconnection insulating structure 508 (e.g., or called metalone dielectric structure). Although only a shallow trench isolationstructure 502 is formed and embedded in the substrate 101, it is notedthat other structures and layers may be formed in and on the substrate101 but not described here for sake of brevity and clarity.

Thus, an integrated circuit for a flash memory device with enlargedspacing between select gate structures and memory gate structures isprovided. The enlarged spacing formed between silicide contact pads inthe select gate structures and memory gate structures advantageouslyprovides a wide process window during a planarization process to preventmetal contamination from being trapped in the spacing. The enlargedspacing is obtained by forming corner recesses at the select gate in thememory cells so that a top surface with a reduced dimension of theselect gate is provided and obtained. The corner recesses may be filledwith a dielectric structure to provide a planar surface as needed.

In accordance with an embodiment, a semiconductor device structureincludes: a semiconductor substrate having memory cell devices formedthereon, the memory cell devices including a plurality of select gatestructures, and a plurality of memory gate structures formed adjacent tothe plurality of select gate structures, wherein at least one of theplurality of select gate structures have a corner recess formed below atop surface of the at least one of the plurality of select gatestructures.

In accordance with another embodiment, a method for forming asemiconductor device structure includes: forming a first gate electrodelayer on a substrate; forming a first charge trapping dielectric on thefirst gate electrode layer; forming a patterned hardmask layer over thefirst charge trapping dielectric; etching the first charge trappingdielectric exposed by the patterned hardmask layer to form a patternedfirst charge trapping dielectric, wherein etching the first chargetrapping dielectric forms a recess extending partially through the firstgate electrode layer; forming a dielectric layer on the substratecovering the patterned first charge trapping dielectric and sidewalls ofthe recess in the first gate electrode layer, wherein a portion of thefirst gate electrode layer at a bottom of the recess is exposed; andforming a select gate structure by etching through the portion of thefirst gate electrode layer at the bottom of the recess using thedielectric layer as sidewall protection for an upper sidewall portion ofthe first gate electrode layer.

In accordance with yet another embodiment, a semiconductor devicestructure includes a semiconductor substrate having memory cell devicesformed thereon, wherein the memory cell devices include a select gatestructure, wherein the select gate structure has a top surface having afirst width shorter than a second width of a bottom surface of theselect gate structure.

In accordance with yet another embodiment, a method for forming a memorycell device includes: forming a first gate electrode layer on asubstrate; forming a dummy dielectric layer on the first gate electrodelayer; patterning the dummy dielectric layer and the first gateelectrode layer, wherein patterning the first gate electrode layer formsfirst recesses in the first gate electrode layer; forming a dielectriclayer over the dummy dielectric layer and over exposed portions of thefirst gate electrode layer; forming second recesses in the bottom of thefirst recesses by etching portions of the dielectric layer and the firstgate electrode along a bottom of the first recesses, wherein a portionof the nitride layer remains along a sidewall of the first recessesafter forming the second recesses, wherein a top surface of thesubstrate is exposed in the second recesses, wherein remaining portionsof the first gate electrode layer form a select gate structure; forminga charge trapping dielectric layer over the remaining portions of thedielectric layer, exposed surfaces of the substrate, and exposedsidewalls of the select gate structures; forming a second gate electrodelayer over the charge trapping dielectric layer; and patterning thesecond gate electrode layer to form a memory gate structure, whereinportions of the dielectric layer and the charge trapping dielectriclayer are interposed between the memory gate structure and the selectgate structure.

In accordance with yet another embodiment, a method for forming asemiconductor memory device structure includes: forming a select gatestructure and a nitride layer, the select gate structure having a lowerportion and an upper portion, the lower portion having a width greaterthan the upper portion, the nitride layer being along a sidewall of theupper portion of the select gate structure, the nitride layer beingabove the lower portion of the select gate structure; forming a chargetrapping layer along a sidewall of the lower portion of the select gatestructure and a sidewall of the nitride layer; and forming a memory gatestructure over the charge trapping layer, wherein the select gatestructure and the memory gate structure contact opposing sidewalls ofthe charge trapping layer, wherein the nitride layer is interposedbetween the charge trapping layer and the select gate structure.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method for forming a semiconductor devicestructure, the method comprising: forming a first gate electrode layeron a substrate; forming a first charge trapping dielectric on the firstgate electrode layer; forming a patterned hardmask layer over the firstcharge trapping dielectric; etching the first charge trapping dielectricexposed by the patterned hardmask layer to form a patterned first chargetrapping dielectric, wherein etching the first charge trappingdielectric forms a recess extending partially through the first gateelectrode layer; forming a dielectric layer on the substrate coveringthe patterned first charge trapping dielectric and sidewalls of therecess in the first gate electrode layer, wherein a portion of the firstgate electrode layer at a bottom of the recess is exposed; and forming aselect gate structure by etching through the portion of the first gateelectrode layer at the bottom of the recess using the dielectric layeras sidewall protection for an upper sidewall portion of the first gateelectrode layer.
 2. The method of claim 1, wherein forming thedielectric layer comprises forming a nitride containing material.
 3. Themethod of claim 1, wherein the recess has a depth between about 10 nmand about 40 nm.
 4. The method of claim 1 further comprising: forming asecond charge trapping dielectric along sidewalls of the dielectriclayer and sidewalls of the select gate structure; forming a second gateelectrode layer on the second charge trapping dielectric; patterning thesecond gate electrode layer and the second charge trapping dielectric toform a memory gate structure partially bounded by the second chargetrapping dielectric on the substrate; and removing the first chargetrapping dielectric and a first portion of the dielectric layer from thesubstrate, leaving a second portion of the dielectric layer filled inthe recess of the first gate electrode layer.
 5. The method of claim 4further comprising forming silicide contact pads on upper surfaces ofthe memory gate structure and the select gate structure.
 6. The methodof claim 5, wherein the silicide contact pads are formed with widthsmeasured between opposite sidewalls of the silicide contact pads betweenabout 30 nm and about 40 nm.
 7. A method for forming a memory celldevice, the method comprising: forming a first gate electrode layer on asubstrate; forming a dummy dielectric layer on the first gate electrodelayer; patterning the dummy dielectric layer and the first gateelectrode layer, wherein patterning the first gate electrode layer formsfirst recesses in the first gate electrode layer; forming a firstdielectric layer over the dummy dielectric layer and over exposedportions of the first gate electrode layer; forming second recesses inthe bottom of the first recesses by etching portions of the firstdielectric layer and the first gate electrode along a bottom of thefirst recesses, wherein a portion of the first dielectric layer remainsalong a sidewall of the first recesses after forming the secondrecesses, wherein a top surface of the substrate is exposed in thesecond recesses, wherein remaining portions of the first gate electrodelayer form a select gate structure; forming a charge trapping dielectriclayer over the remaining portions of the first dielectric layer, exposedsurfaces of the substrate, and exposed sidewalls of the select gatestructures; forming a second gate electrode layer over the chargetrapping dielectric layer; and patterning the second gate electrodelayer to form a memory gate structure, wherein portions of the firstdielectric layer and the charge trapping dielectric layer are interposedbetween the memory gate structure and the select gate structure.
 8. Themethod of claim 7, wherein forming the charge trapping dielectric layercomprises forming a multilayer dielectric.
 9. The method of claim 8,wherein forming the multilayer dielectric comprises forming anoxide-nitride-oxide (ONO) dielectric or an oxide-silicon-oxide (OSiO)dielectric.
 10. The method of claim 7, wherein the charge trappingdielectric layer completely separates the second gate electrode layerfrom the substrate.
 11. The method of claim 7, wherein the chargetrapping dielectric layer is formed to have a substantially similarstructure as the dummy dielectric layer.
 12. The method of claim 7,wherein forming the charge trapping dielectric layer comprises formingmultiple layers, wherein the multiple layers comprise a first layer anda second layer, the first layer comprising a different material than thesecond layer.
 13. The method of claim 7, wherein an upper surface of theselect gate structure is level with an upper surface of the memory gatestructure.
 14. A method for forming a semiconductor memory devicestructure, the method comprising: forming a select gate structure and anitride layer, the select gate structure having a lower portion and anupper portion, the lower portion having a width greater than the upperportion, the nitride layer being along a sidewall of the upper portionof the select gate structure, the nitride layer being above the lowerportion of the select gate structure; forming a charge trapping layeralong a sidewall of the lower portion of the select gate structure and asidewall of the nitride layer; and forming a memory gate structure overthe charge trapping layer, wherein the select gate structure and thememory gate structure contact opposing sidewalls of the charge trappinglayer, wherein a first portion of the nitride layer is interposedbetween the charge trapping layer and the select gate structure.
 15. Themethod of claim 14, wherein forming the charge trapping layer comprisesforming a composite material comprising at least three sublayers. 16.The method of claim 14, wherein forming the charge trapping layercomprises: forming a first sublayer, wherein the first sublayercomprises an oxide; forming a second sublayer over the first sublayer,wherein the second sublayer comprises a nitride; and forming a thirdsublayer over the second sublayer, wherein the third sublayer comprisesan oxide.
 17. The method of claim 14, wherein the select gate structureis formed such that a width of the select gate structure adjacent thenitride layer is less than a width of the select gate structure adjacentthe charge trapping layer.
 18. The method of claim 14 further comprisingforming a plurality of metal silicide contact pads on top surfaces ofthe select gate structure and the memory gate structure.
 19. The methodof claim 14 further comprising forming an interlayer insulatingsubstructure, wherein the select gate structure and the interlayerinsulating structure contact opposing sidewalls of a portion of thecharge trapping layer, wherein a second portion of the nitride layer isinterposed between the portion of the charge trapping layer and theselect gate structure.
 20. The method of claim 14, wherein top surfacesof the select gate structure and the memory gate structure are levelwith each other.